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www.irf.com 1 co-pack hexfet ? power mosfet and schottky diode ideal for buck regulator applications n-channel hexfet power mosfet low v f schottky rectifier generation 5 technology so-8 footprint irf7353d2pbf pd- 95215a fetky mosfet / schottky diode parameter maximum units r ja junction-to-ambient 62.5 c/w thermal resistance ratings description v dss = 30v r ds(on) = 0.029 ? schottky v f = 0.52v the fetky ? family of co-pack hexfet ? power mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. generation 5 hexfet power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combinining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. 10/8/04 notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 9) starting t j = 25c, l = 10mh, r g = 25 ? , i as = 4.0a i sd 4.0a, di/dt 74a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2% surface mounted on fr-4 board, t 10sec top view 8 12 3 4 5 6 7 a as g dd k k parameter maximum units i d @ t a = 25c continuous drain current 6.5 a i d @ t a = 70c 5.2 i dm pulsed drain current 52 p d @t a = 25c power dissipation 2.0 w p d @t a = 70c 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c absolute maximum ratings (t a = 25c unless otherwise noted) so-8 lead-free downloaded from: http:///
irf7353d2pbf 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 v v gs = 0v, i d = 250a r ds(on) static drain-to-source on-resistance 0.023 0.029 v gs = 10v, i d = 5.8a 0.032 0.046 v gs = 4.5v, i d = 4.7a v gs(th) gate threshold voltage 1.0 v v ds = v gs , i d = 250a g fs forward transconductance 14 s v ds = 24v, i d = 5.8a i dss drain-to-source leakage current 1.0 v ds = 24v, v gs = 0v 25 v ds = 24v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage 100 v gs = 20v gate-to-source reverse leakage -100 v gs = -20v q g total gate charge 22 33 i d = 5.8a q gs gate-to-source charge 2.6 3.9 nc v ds = 24v q gd gate-to-drain ("miller") charge 6.4 9.6 v gs = 10v (see figure 8) t d(on) turn-on delay time 8.1 12 v dd = -5v t r rise time 8.9 13 i d = 1.0a t d(off) turn-off delay time 26 39 r g = 6.0 ? t f fall time 18 26 r d = 15 ? c iss input capacitance 650 v gs = 0v c oss output capacitance 320 pf v ds = 25v c rss reverse transfer capacitance 130 ? = 1.0mhz (see figure 7) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) ? a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) 2.5 a i sm pulsed source current (body d iode) 30 v sd body diode forward voltage 0.78 1.0 v t j = 25c, i s = 1.7a, v gs = 0v t rr reverse recovery time (body diode) 45 68 ns t j = 25c, i f = 1.7a q rr reverse recovery charge 58 87 nc di/dt = 100a/s mosfet source-drain ratings and characteristics parameter max. units conditions i f (av) max. average forward current 3.2 50% duty cycle. rectangular wave, tc = 25c 2.0 50% duty cycle. rectangular wave, tc = 70c i sm max. peak one cycle non-repetitive 200 5s sine or 3s rect. pulse following any rated surge current 20 10ms sine or 6ms rect. pulse load condition & with vrrm applied schottky diode maximum ratings parameter max. units conditions v fm max. forward voltage drop 0.57 if = 3.0, tj = 25c 0.77 if = 6.0, tj = 25c 0.52 if = 3.0, tj = 125c 0.79 if = 6.0, tj = 125c . i rm max. reverse leakage current 0.30 vr = 30v tj = 25c 37 tj = 125c c t max. junction capacitance 310 pf vr = 5vdc (100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 4900 v/s rated vr schottky diode electrical specifications ( hexfet is the reg. tm for international rectifier power mosfet's ) downloaded from: http:///
irf7353d2pbf www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature power mosfet characteristics 1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.8a downloaded from: http:///
irf7353d2pbf 4 www.irf.com power mosfet characteristics fig 5. typical on-resistance vs. drain current fig 6. typical on-resistance vs. gate voltage
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0 .020 0 .024 0 .028 0 .032 0 .036 0 .040 0 1 02 03 04 0 a i , drain current (a) d v = 10v gs v = 4.5v gs
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0 .00 0 .02 0 .04 0 .06 0 .08 0 .10 0 .12 0 3 6 9 12 15 a gs v , gate-to-source voltage (v) i = 5.8a d fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. drain-to-source voltage 0 300 600 900 1200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 5.8a v = 15v ds downloaded from: http:///
irf7353d2pbf www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. maximum effective transient thermal impedance, junction-to-ambient power mosfet characteristics fig 10. typical source-drain diode forward voltage 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a downloaded from: http:///
irf7353d2pbf 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage
fig. 12 - typical forward voltage drop characteristics 0 .001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 r 100c 75c 50c 25c 125c a t = 150c j reverse voltage - v (v) fig.14 - maximum allowable ambient temp. vs. forward current 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 f(av) a average forward current - i (a) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 v = 80% rated r = 62.5c/w square wave thja r dc allowable ambient temperature - ( c ) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1 .0 f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j forward voltage drop - v f (v) downloaded from: http:///
irf7353d2pbf www.irf.com 7 e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms -0 12 aa. not es : 1. dimensioning & tolerancing per as me y14.5m-1994. 2. cont rolling dime ns ion: millimet er 3. dimensions are shown in millimeters [inches]. 5 dime ns ion doe s not include mold prot rus ions . 6 dime ns ion doe s not include mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dime ns ion is t he l engt h of le ad f or s oldering t o a s ubst rate. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.07 0] so-8 (fetky) package outline

rectifier logo international example: this is an irf7807d1 (fetky) xxxx 807d1 y = last digit of the year a = assembly site code ww = we e k lot code product (optional) p = disgnates lead - free dat e code (yww) part number so-8 (fetky) part marking information downloaded from: http:///
irf7353d2pbf 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir's web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/04 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 (fetky) tape and reel

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